?2002 fairchild semiconductor corporation sgl25n120ruf rev. b igbt sgl25n120ruf sgl25n120ruf short circuit rated igbt general description fairchild's ruf series of insulated gate bipolar transistors (igbts) provides low conduction and switching losses as well as short circuit ruggedness. the ruf series is designed for applications such as motor control, uninterrupted power supplies (ups) and general inverters where short circuit ruggedness is a required feature. features ? short circuit rated 10 s @ t c = 100 c, v ge = 15v ? high speed switching ? low saturation voltage : v ce(sat) = 2.3 v @ i c = 25a ? high input impedance absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description sgl25n120ruf units v ces collector-emitter voltage 1200 v v ges gate-emitter voltage 25 v i c collector current @ t c = 25 c40 a collector current @ t c = 100 c25 a i cm (1) pulsed collector current 75 a t sc short circuit withstand time @ t c = 100 c10 s p d maximum power dissipation @ t c = 25 c 270 w maximum power dissipation @ t c = 100 c 108 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc thermal resistance, junction-to-case -- 0.46 c / w r ja thermal resistance, junction-to-ambient -- 25 c / w applications ac & dc motor controls, general purpose inverters, robotics, and servo controls. gce to-264 g c e g c e
sgl25n120ruf rev. b sgl25n120ruf ?2002 fairchild semiconductor corporation electrical characteristics of the igbt t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 1ma 1200 -- -- v ? b vces / ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 25ma, v ce = v ge 3.5 5.5 7.5 v v ce(sat) collector to emitter saturation voltage i c = 25a , v ge = 15v -- 2.3 3.0 v i c = 40a , v ge = 15v -- 2.8 -- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 2400 -- pf c oes output capacitance -- 220 -- pf c res reverse transfer capacitance -- 70 -- pf switching characteristics t d(on) turn-on delay time v cc = 600 v, i c = 25a, r g = 10 ? , v ge = 15v, inductive load, t c = 25 c -- 30 -- ns t r rise time -- 60 -- ns t d(off) turn-off delay time -- 70 130 ns t f fall time -- 150 300 ns e on turn-on switching loss -- 1.60 -- mj e off turn-off switching loss -- 1.63 -- mj e ts total switching loss -- 3.23 4.55 mj t d(on) turn-on delay time v cc = 600 v, i c = 25a, r g = 10 ? , v ge = 15v, inductive load, t c = 125 c -- 30 -- ns t r rise time -- 70 -- ns t d(off) turn-off delay time -- 90 165 ns t f fall time -- 200 400 ns e on turn-on switching loss -- 1.88 -- mj e off turn-off switching loss -- 2.50 -- mj e ts total switching loss -- 4.35 6.31 mj t sc short circuit withstand time v cc = 600 v, v ge = 15v @ t c = 100 c 10 -- -- s q g total gate charge v ce = 600 v, i c = 25a, v ge = 15v -- 110 165 nc q ge gate-emitter charge -- 18 27 nc q gc gate-collector charge -- 55 83 nc l e internal emitter inductance measured 5mm from pkg -- 18 -- nh
sgl25n120ruf rev. b sgl25n120ruf ?2002 fairchild semiconductor corporation fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. saturation voltage vs. case temperature at variant current level fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 0246810 0 25 50 75 100 125 150 175 20v 17v 15v 12v v ge = 10v t c = 25 collector current, i c [a] collector - emitter voltage, v ce [v] 25 50 75 100 125 150 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 common emitter v ge = 15v i c = 25a 40a collector - emitter voltage, v ce [v] case temperature, t c [ ] 0246810 0 25 50 75 100 125 common emitter v ge = 15v t c = 25 t c = 125 collector current, i c [a] collector - emitter voltage, v ce [v] 0 4 8 12 16 20 0 4 8 12 16 20 common emitter t c = 25 50a 25a i c = 13a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 0 4 8 12 16 20 0 4 8 12 16 20 common emitter t c = 125 50a 25a i c = 13a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 0.1 1 10 100 1000 0 10 20 30 40 50 v cc = 600v load current : peak of square wave duty cycle : 50% t c = 100 power dissipation = 55w load current [a] frequency [khz]
sgl25n120ruf rev. b sgl25n120ruf ?2002 fairchild semiconductor corporation fig 7. capacitance characteristics fig 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current 10 100 1000 common emitter v cc = 600v, v ge = 15v i c = 25a t c = 25 t c = 125 eoff eon eoff switching loss [ j] gate resistance, r g [ ? ] 110 0 500 1000 1500 2000 2500 3000 3500 4000 common emitter v ge =0v, f = 1mhz t c = 25 cies coes cres capacitance [pf] collector - emitter voltage, v ce [v] 10 100 10 100 common emitter v cc = 600v, v ge = 15v i c = 25a t c = 25 t c = 125 tr td(on) switching time [ns] gate resistance, r g [ ? ] 10 100 100 common emitter v cc = 600v, v ge = 15v i c = 25a t c = 25 t c = 125 tf tf td(off) switching time [ns] gate resistance, r g [ ? ] 10 20 30 40 50 10 100 common emitter v ge = 15v, r g = 10 ? t c = 25 t c = 125 tr td(on) switching time [ns] collector current, i c [a] 10 20 30 40 50 100 common emitter v ge = 15v, r g = 10 ? t c = 25 t c = 125 tf td(off) switching time [ns] collector current, i c [a]
sgl25n120ruf rev. b sgl25n120ruf ?2002 fairchild semiconductor corporation fig 14. gate charge characteristics fig 15. soa characteristics fig 16. turn-off soa fig 17. transient thermal impedance of igbt fig 13. switching loss vs. collector current 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 10 0.1 0.5 0.2 0.05 0.02 0.01 single pulse thermal response [zthjc] rectangular pulse duration [sec] 1 10 100 1000 1 10 100 safe operating area v ge = 20v, t c = 100 collector current, i c [a] collector - emitter voltage, v ce [v] 15 25 35 45 55 1000 common emitter v ge = 15v, r g = 10 ? t c = 25 t c = 125 eon eoff eon eoff switching loss [ j] collector current, i c [a] 0 20406080100120 0 2 4 6 8 10 12 14 16 common emitter r l = 24 ? t c = 25 600v 400v v cc = 200v gate - emitter voltage, v ge [v] gate charge, q g [nc] 0.1 1 10 100 1000 0.01 0.1 1 10 100 single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature 50 s 100 s 1ms dc operation i c max. (pulsed) i c max. (continuous) collector current, i c [a] collector - emitter voltage, v ce [v] pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm zthjc + t c
?2002 fairchild semiconductor corporation sgl25n120ruf rev. b sgl25n120ruf package dimension 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ] 4.90 0.20 20.00 0.20 (8.30) (8.30) (1.00) (0.50) (2.00) (7.00) (r1.00) (r2.00) ?.30 0.20 (7.00) (1.50) (1.50) (1.50) 2.50 0.20 3.00 0.20 2.80 0.30 1.00 +0.25 ?.10 0.60 +0.25 ?.10 1.50 0.20 6.00 0.20 20.00 0.20 20.00 0.50 5.00 0.20 3.50 0.20 2.50 0.10 (9.00) (9.00) (2.00) (1.50) (0.15) (2.80) (4.00) (11.00) to-264 (fs pkg code ar) dimensions in millimeters
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. h5 ?2002 fairchild semiconductor corporation star*power is used under license acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? i 2 c? isoplanar? littlefet? microfet? micropak? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? smp? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet ? vcx?
product folder - fairchild p/n sgl25n120ruf - discrete, short circuit rated igbt fairchild semiconductor space space space search | parametric | cross reference | inventory space product folders and datasheets application notes space space space find products home >> find products >> space space space space products groups space analog and mixed signal discrete interface logic microcontrollers non-volatile memory optoelectronics markets and applications new products product selection and parametric search cross-reference search technical information buy products technical support my fairchild company sgl25n120ruf discrete, short circuit rated igbt related links request samples dotted line how to order products dotted line product change notices (pcns) dotted line support dotted line distributor and field sales representatives dotted line quality and reliability dotted line design tools contents general description | features | applications | product status/pricing/packaging general description ffairchild's ruf series of insulated gate bipolar transistors (igbts) provides low conduction and switching losses as well as short circuit ruggedness. the ruf series is designed for applications such as motor control, uninterrupted power supplies (ups) and general inverters where short circuit ruggedness is a required feature. back to top features l short circuit rated 10s @ t c = 100c, v ge = 15v l high speed switching l low saturation voltage : v ce(sat) = 2.3 v @ i c = 25a l high input impedance back to top applications ac &dc motor controls, general purpose inverters, robotics, and servo controls. back to top space datasheet download this datasheet pdf e-mail this datasheet [e- mail] this page print version file:///d|/fair/pdf/sgl25n120ruf.html (1 of 2) [10/7/02 11:16:06 am]
product folder - fairchild p/n sgl25n120ruf - discrete, short circuit rated igbt product status/pricing/packaging product product status pricing* inventory check & ordering package type leads packing method SGL25N120RUFTU full production $7.58 purchase to-264 3 rail * fairchild 1,000 piece budgetary pricing back to top space space home | find products | technical information | buy products | support | company | contact us | site index | privacy policy ? copyright 2002 fairchild semiconductor space space file:///d|/fair/pdf/sgl25n120ruf.html (2 of 2) [10/7/02 11:16:06 am]
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